Analysis of Metalorganic Vapor Phase Epitaxial Growth in GaInN Characterized by in Situ X-ray Diffraction(<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques)

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  • その場X線回折法による有機金属化合物気相成長GaInNの評価(<特集>半導体結晶成長機構のその場観察)
  • その場X線回折法による有機金属化合物気相成長GaInNの評価
  • ソノ バ Xセン カイセツホウ ニ ヨル ユウキ キンゾク カゴウブツ キソウ セイチョウ GaInN ノ ヒョウカ

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Abstract

High performance group III nitride semiconductor based light-emitting diodes and laser diodes most fabricated by metalorganic vapor phase epitaxy (MOVPE). In situ monitoring in MOVPE is the key process in device manufacturing. These information can be feedback to growth condition and find its mechanism. In this paper, we reported the analyzation of MOVPE growth in GaInN single layer and GaInN/GaN superlattice on GaN by in situ XRD monitoring.

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