有機金属気相成長法によるN極性窒化物半導体の成長技術

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タイトル別名
  • Crystal Growth Technology of N-polar Nitride Semiconductors by Metalorganic Vapor Phase Epitaxy

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<p>  N-polar III-nitride materials have been attracted attention for the application to InGaN-based optical devices and AlGaN-based electronic devices. Most of the III-nitride-based device structures have been grown using metalorganic vapor phase epitaxy. In this report, recent progress of crystal growth technology of N-polar III-nitride materials using metalorganic vapor phase epitaxy is reviewed. The growth of N-polar materials shows different behavior from that of Ga-polar materials, several optimizations of growth conditions are necessary. N-polar GaN often shows hillock structure at the surface. The use of vicinal substrates helps the suppression of hillock formation. InGaN growth often suffers from the inclusion of zinc-blende crystal phase. Growth at low supersaturation conditions is one of the solutions to obtain pure wurtzite InGaN films. To prevent hillock formation during the growth of AlGaN on N-polar GaN, lowering the growth rate is effective.</p>

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詳細情報 詳細情報について

  • CRID
    1390001205898179072
  • NII論文ID
    130006727544
  • DOI
    10.19009/jjacg.3-45-1-01
  • ISSN
    21878366
    03856275
  • 本文言語コード
    ja
  • データソース種別
    • JaLC
    • CiNii Articles
    • KAKEN
  • 抄録ライセンスフラグ
    使用不可

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