有機金属気相成長法によるN極性窒化物半導体の成長技術
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- 谷川 智之
- 東北大学金属材料研究所
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- プラスラットスック キャッティウット
- 東北大学金属材料研究所
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- 木村 健司
- 東北大学金属材料研究所
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- 窪谷 茂幸
- 東北大学金属材料研究所
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- 松岡 隆志
- 東北大学金属材料研究所
書誌事項
- タイトル別名
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- Crystal Growth Technology of N-polar Nitride Semiconductors by Metalorganic Vapor Phase Epitaxy
抄録
<p> N-polar III-nitride materials have been attracted attention for the application to InGaN-based optical devices and AlGaN-based electronic devices. Most of the III-nitride-based device structures have been grown using metalorganic vapor phase epitaxy. In this report, recent progress of crystal growth technology of N-polar III-nitride materials using metalorganic vapor phase epitaxy is reviewed. The growth of N-polar materials shows different behavior from that of Ga-polar materials, several optimizations of growth conditions are necessary. N-polar GaN often shows hillock structure at the surface. The use of vicinal substrates helps the suppression of hillock formation. InGaN growth often suffers from the inclusion of zinc-blende crystal phase. Growth at low supersaturation conditions is one of the solutions to obtain pure wurtzite InGaN films. To prevent hillock formation during the growth of AlGaN on N-polar GaN, lowering the growth rate is effective.</p>
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 45 (1), n/a-, 2018
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205898179072
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- NII論文ID
- 130006727544
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- ISSN
- 21878366
- 03856275
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可