27aB08 Sputtering processes of wide-gap semiconductors induced by highly-charged ions(NCCG-34)

DOI 6 References
  • Motohashi Kenji
    Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology
  • Tsurubuchi Seiji
    Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology

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Other Title
  • 27aB08 多価イオンビームによるワイドギャップ半導体のスパッタリング過程(窒化物(3),第34回結晶成長国内会議)

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Abstract

In order to investigate potential sputtering processes of wide-gap semiconductors induced by highly-charged-ion impact, three-dimensional momentum of sputtered ions from a SiC (0001) surface was measured by a newly developed device. The experimental results suggest that the potential sputtering process plays an important role in low energy interaction between highly-charged ion and SiC surface.

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Details 詳細情報について

  • CRID
    1390001205898203264
  • NII Article ID
    110007327598
  • NII Book ID
    AN00188386
  • DOI
    10.19009/jjacg.31.3_268
  • ISSN
    21878366
    03856275
  • Text Lang
    en
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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