4H-SiCエピタキシャル成長における欠陥挙動解析と欠陥制御技術(<特集>SiCの現状と今後の展開)

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  • Analysis of Defect Formation in 4H-SiC Epitaxial Growth and Development of Defect Control Techniques(<Special Issue>)Opening Up a New World of Crystal Growth on SiC)
  • 4H-SiCエピタキシャル成長における欠陥挙動解析と欠陥制御技術
  • 4H-SiC エピタキシャル セイチョウ ニ オケル ケッカン キョドウ カイセキ ト ケッカン セイギョ ギジュツ

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This paper reviews recent achievements in defect formation analysis and reduction techniques of extended and point defects for 4H-SiC epilayers. Basal plane dislocations (BPDs) are found to convert to threading edge dislocations (TEDs) by not only epitaxial growth but also simple high-temperature annealing. A very low BPD density of 0.09 cm^<-2> is obtained in the use of a 4° off 4H-SiC substrate. 8H in-grown stacking faults are also reduced to be <0.1 cm^<-2> in 4H-SiC epitaxial growth by controlling the gas system. Elimination of the Z_<1/2> center and significant improvements in carrier lifetimes are realized by in-diffusion of carbon interstitials from a surface region to a deep region of 4H-SiC epilayers.

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