SiCバルク単結晶成長の概要(<特集>SiCの現状と今後の展開)

DOI Web Site 参考文献18件
  • 西澤 伸一
    独立行政法人産業技術総合研究所エネルギー技術研究部門

書誌事項

タイトル別名
  • SiC Bulk Single Crystal Growth(<Special Issue>)Opening Up a New World of Crystal Growth on SiC)
  • SiCバルク単結晶成長の概要
  • SiC バルクタンケッショウ セイチョウ ノ ガイヨウ

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抄録

SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technical issues, in this paper, the example of design optimization for SiC sublimation growth is described. The shape of SiC grown crystal (diameter and length) can be controlled by using modified crucible design. And as the example of the theoretical problem, the author has tried to use atomic scale modeling (DFT calculation) to understand the physics that determine SiC polytype during crystal growth process. By calculating the bulk crystal energy of each polytype, and surface energy of each possible surface during growth, it is pointed out that growing surface itself has effects on the polytype stability of SiC.

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