21pXL-5 Preparation of High Quality Si (111)1×1 Surface
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- Kato H.
- Tohoku Univ
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- Taoka T.
- Tohoku Univ
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- Nishikata S.
- IMR
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- Sazaki G.
- IMR
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- Yamada T.
- CIR:RIKEN
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- Czajka R.
- CIR
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- Wawro A.
- CIR
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- Nakajima K.
- IMR
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- Kasuya A.
- CIR
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- Suto S.
- Tohoku Univ
Bibliographic Information
- Other Title
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- 21pXL-5 高品位H:Si(111)1×1表面作成法と表面フォノン(表面界面ダイナミクス,領域9,表面・界面,結晶成長)
Journal
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- Meeting Abstracts of the Physical Society of Japan
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Meeting Abstracts of the Physical Society of Japan 62.2.4 (0), 917-, 2007
The Physical Society of Japan
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Details 詳細情報について
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- CRID
- 1390001206012457088
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- NII Article ID
- 110007141878
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- ISSN
- 21890803
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles