TiO<sub>2</sub> Thin Films Formed by Electron Cyclotron Resonance Plasma Oxidation at High Temperature and Their Application to Capacitor Dielectrics
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- Abe Yoshio
- Hitachi Research Laboratory, Hitachi, Ltd., 7–1–1 Omika–cho, Hitachi–shi, Ibaraki 319–12
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- Fukuda Takuya
- Hitachi Research Laboratory, Hitachi, Ltd., 7–1–1 Omika–cho, Hitachi–shi, Ibaraki 319–12
書誌事項
- タイトル別名
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- TiO2 Thin Films Formed by Electron Cyclotron Resonance Plasma Oxidation at High Temperature and Their Application to Capacitor Dielectrics.
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説明
Low-leakage-current rutile- TiO2 thin films were fabricated by electron cyclotron resonance (ECR) plasma oxidation of Ti thin films. Rutile- TiO2 thin films could be obtained at substrate temperatures above 280°C. A relative dielectric constant of about 120 was obtained at substrate temperatures above 390°C. Leakage current characteristics of the TiO2 thin films were improved by using high-temperature plasma oxidation and high-work-function electrodes. A leakage current of less than 1× 10-8 A/cm2 at an applied voltage of 1.25 V was obtained for a Au/TiO2/Pt capacitor with SiO2 equivalent thickness of 4.9 nm.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 33 (9A), L1248-L1250, 1994
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206247121792
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- NII論文ID
- 210000036539
- 130004520598
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- ISSN
- 13474065
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可