A Novel Technique for Ultrathin CoSi<sub>2</sub> Layers: Oxide Mediated Epitaxy

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  • Tung Raymond T.
    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro–ku, Tokyo 152, Japan and Bell Labs, Lucent Technologies, Murray Hill, N.J. 07974 U.S.A.

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  • A Novel Technique for Ultrathin CoSi2 Layers: Oxide Mediated Epitaxy.
  • Novel Technique for Ultrathin CoSi2 Lay

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A novel technique, oxide mediated epitaxy (OME), was recently described for the growth of single crystal CoSi2 layers on the (100), (110), and (111) surfaces of silicon. Deposition of a thin layer of cobalt (1-3 nm) onto Si surfaces covered with a thin peroxide-grown SiOx layer and annealing at 500-700° C led to the growth of essentially uniform, epitaxial CoSi2 layers. The thin SiOx layer remained largely on the surface of the OME grown CoSi2 layers as a cap. Deposition of cobalt at elevated temperature onto OME grown CoSi2 layers led to a significant re-evaporation of cobalt from the SiOx surface. Presently, the OME effect was demonstrated on heavily doped p+ and n+-Si and on narrow (0.22 µ m) Si lines. On all surfaces, thin (10-30nm), excellent quality, CoSi2 single crystal thin films were grown by repeated growth sequences involving depositions of cobalt at room temperature and anneals at 600-700° C. It was also shown that faceting at CoSi2/Si(100) interfaces could be significantly reduced by a high temperature anneal.

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