Characteristics of the Electric Capacitance and Dielectric Loss of the Thermal Oxide of Porous Silicon Formed Using Highly Phosphorus Diffused Silicon.
-
- Arita Yoshinobu
- NTT System Electronics Laboratories, 3–1, Morinosato Wakamiya, Atsugi, Kanagawa, 243–01, Japan
-
- Kuranari Kunihiro
- MAKI Hospital, 976–1 Nagaoka, Chikushino, Fukuoka 818, Japan
書誌事項
- タイトル別名
-
- Characteristics of the Electric Capacit
この論文をさがす
抄録
The anodic reaction condition dependence and the oxidation time dependence of the electric capacitance and the dielectric loss factor have been investigated for the thermal oxide of porous silicon formed with highly phosphorus diffused silicon. A high degree of phosphorus diffusion in the anodic reaction region in advance of the reaction is an effective way to decrease oxide capacitance produced by the oxidation of porous silicon formed using n-type silicon. The frequency dependence of the electric capacitance and the dielectric loss are discussed. A model based on interstitial conduction is investigated to explain the experimental results regarding the frequency dependence of capacitance and tan δ .
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 36 (3A), 1035-1039, 1997
The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001206247851648
-
- NII論文ID
- 210000040704
- 110003905703
- 130004523396
-
- NII書誌ID
- AA10457675
-
- ISSN
- 13474065
- 00214922
-
- NDL書誌ID
- 4187839
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可