Light Point Defects on Hydrogen Annealed Silicon Wafer.

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  • Izunome Koji
    Toshiba Ceramics Co., Ltd., R&D Center, 30 Soya, Hadano, Kanagawa 257, Japan
  • Miyashita Maki
    Toshiba Ceramics Co., Ltd., R&D Center, 30 Soya, Hadano, Kanagawa 257, Japan
  • Ichikawa Akihiko
    Toshiba Ceramics Co., Ltd., R&D Center, 30 Soya, Hadano, Kanagawa 257, Japan
  • Kirino Yoshio
    Toshiba Ceramics Co., Ltd., R&D Center, 30 Soya, Hadano, Kanagawa 257, Japan
  • Arita Jiro
    KLA TENCOR Japan Co., Ltd., 4–21–1 Minaminaruse Machida, Tokyo 194, Japan
  • Ueki Akira
    KLA TENCOR Japan Co., Ltd., 4–21–1 Minaminaruse Machida, Tokyo 194, Japan

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  • Light Point Defects on Hydrogen Anneale

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In observing 0.1 µ m in size light point defects (LPDs) in Czochralski-grown silicon wafers in hydrogen annealing by scatterometer (Surfscan® SP1 and Surfscan 6200 from Tencor Instrument), we have found that the hydrogen annealed wafer has fewer defects on the surface, compared with a polished wafer. Assuming that LPDs are equal to Crystal Originated Particles (COPs) which are oxygen precipitates and/or vacancy-type defects, LPDs can therefore be reduced by evaporating oxygen from the surface, and migrating silicon-atoms onto the surface during hydrogen annealing at 1200° C for 1 h.

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