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- Itoh Masashi
- Department of Physics, Tokyo Institute of Technology, Oh–okayama, Meguro, Tokyo 152, Japan
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- Yamamoto Naoki
- Department of Physics, Tokyo Institute of Technology, Oh–okayama, Meguro, Tokyo 152, Japan
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- Takemoto Kuniko
- Department of Metallurgical Engineering, Tokyo Institute of Technology, Oh–okayama, Meguro, Tokyo 152, Japan
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- Nittono Osamu
- Department of Metallurgical Engineering, Tokyo Institute of Technology, Oh–okayama, Meguro, Tokyo 152, Japan
書誌事項
- タイトル別名
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- Cathodoluminescence Imaging of n-Type P
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抄録
Cathodoluminescence (CL) from n-type porous silicon (PS) was studied using a transmission electron microscope (TEM) equipped with the CL detection system. Two luminescence peaks at wavelengths of 660 nm and 420 nm were observed from a cross-sectional sample. The monochromatic CL images clearly reveal the spatial distribution of these luminescences along the depth direction; the 660 nm luminescence is mainly from near the top surface of the PS layer and the 420 nm luminescence the interface between the PS layer and Si substrate. The increase of the 420 nm luminescence intensity upon removal of the Si substrate suggests that the excited carriers in the residual Si matrix of the PS take part in the 420 nm luminescence.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (8), 4182-4186, 1996
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206248638976
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- NII論文ID
- 210000039562
- 110003905390
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4060013
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可