Fast Deposition of Amorphous and Microcrystalline Silicon Films from SiH2Cl2-SiH4-H2 by Plasma-Enhanced Chemical Vapor Deposition.

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  • Arai Takeshi
    The Faculty of Engineering, Saitama University, 255 Shimo–Okubo, Urawa, Saitama, 338 (Japan)
  • Nakamura Takuya
    The Faculty of Engineering, Saitama University, 255 Shimo–Okubo, Urawa, Saitama, 338 (Japan)
  • Shirai Hajime
    The Faculty of Engineering, Saitama University, 255 Shimo–Okubo, Urawa, Saitama, 338 (Japan)

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  • Fast Deposition of Amorphous and Microc
  • Fast Deposition of Amorphous and Microcrystalline Silicon Films from SiH<sub>2</sub>Cl<sub>2</sub>–SiH<sub>4</sub>–H<sub>2</sub> by Plasma-Enhanced Chemical Vapor Deposition

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Fast deposition of hydrogenated chlorinated amorphous and microcrystalline silicon (a-Si:H(Cl), µ c-Si:H(Cl)) thin films is achieved without powder formation and deterioration of their optoelectronic properties by plasma-enhanced chemical vapor deposition (rf PECVD) from SiH2Cl2- SiH4- H2. The Si-network can be varied from microcrystalline to amorphous at high deposition rate of about 20 Å/s with addition of SiH4 under steady flow of SiH2Cl2- H2 plasma. The deposition rate strongly depends on the mixture ratio of SiH2Cl2 and SiH4 and the substrate temperature.

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