Simulation of Clustering and Pile-Up during Post-Implantation Annealing of Phosphorus in Silicon.
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- Schroer Erwin
- NTT System Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi 243–0198, Japan
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- Uematsu Masashi
- NTT Basic Research Laboratories, 3–1 Morinosato Wakamiya, Atsugi 243–0198, Japan
Bibliographic Information
- Other Title
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- Simulatioin of Clustering and Pile-Up during Post-Implantation Annealing of Phosphorus in Silicon
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Abstract
We report on the simulation of the annealing behavior of medium dose (1013-1014 cm-2) implanted phosphorus in silicon. It is shown that the transient clustering of phosphorus has to be taken into account in order to achieve consistent simulation results. The pile-up of phosphorus at the silicon-silicondioxide interface is considered by including a diffusion-segregation term in the diffusion-reaction equations. We show how the phosphorus clustering impacts the phosphorus amount in the pile-up layer and compare the simulation results with available experimental data.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 38 (1A), 7-11, 1999
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390001206249357056
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- NII Article ID
- 110003907064
- 210000046132
- 130004525732
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- NII Book ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL BIB ID
- 4643082
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed