Far-Infrared Reflectance Study of Coupled Longitudinal-Optical Phonon-Hole Plasmon Modes and Transport Properties in Heavily Doped p-Type GaAs.

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  • Fukasawa Ryoichi
    Kansai Advanced Research Center, Communications Research Laboratory, Ministry of Posts and Telecommunications, 588–2 Iwaoka, Kobe 651–24, Japan
  • Sakai Kiyomi
    Kansai Advanced Research Center, Communications Research Laboratory, Ministry of Posts and Telecommunications, 588–2 Iwaoka, Kobe 651–24, Japan
  • Perkowitz Sidney
    Department of Physics, Emory University, Atlanta, Georgia 30322–2430, U.S.A

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  • Far-Infrared Reflectance Study of Coupl

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We measured room-temperature far-infrared reflectance spectra of ten p-type, Be-doped, molecular-beam-epitaxy-grown GaAs films with hole densities from 6.3× 1017 to 2.9× 1019 cm-3 and examined the frequency-dependent dielectric function of coupled phonon-heavily damped hole plasmon modes in these samples without the complications that arise in Raman scattering experiments. Both a two-oscillator dielectric function ε (ω ), and Kukharskii's factorized form ε K(ω ) for the dielectric function, reproduce the data well. The plasmon-like modes clearly appear in the reflectance spectra, although they are suppressed in the Raman spectra, and we find that their frequencies are best given by finding the solutions of ε (ω )=0 in the complex ω -plane. The infrared data also accurately yield the hole drift mobilities when we consider values for the Hall scattering factor in p-type GaAs.

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