Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements.

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  • Abe Hajime
    Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
  • Harima Hiroshi
    Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
  • Nakashima Shin–ichi
    Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
  • Tani Masahiko
    Kansai Advanced Research Center, Communications Research Laboratory, Iwaoka, Kobe, Hyogo 651–24, Japan
  • Sakai Kiyomi
    Kansai Advanced Research Center, Communications Research Laboratory, Iwaoka, Kobe, Hyogo 651–24, Japan
  • Tokuda Yasunori
    Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan
  • Kanamoto Kyozo
    Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan
  • Abe Yuji
    Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan

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タイトル別名
  • Characterization of Crystallinity in Lo

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Low-temperature-grown GaAs homo-epitaxial layers were studied by Raman scattering and time-resolved photoreflectance techniques. Raman spectral profiles, polarization properties and lifetimes of photo-induced carriers depend strongly on growth conditions and post annealing. The experimental results showed that heavily defective layers were formed in as-grown layers, while post-annealed layers were less defective and consisted of partially misoriented crystallites or polycrystals. The carrier lifetime was short and the magnitude of the optical response was small in defective layers grown at relatively low temperatures, while the optical response was increased by annealing and by increasing the growth temperature. Of the samples tested, GaAs layers grown at 200-250° C and post-annealed layers gave a lifetime of 0.3 ps with relatively high optical response.

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