Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements.
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- Abe Hajime
- Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
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- Harima Hiroshi
- Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
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- Nakashima Shin–ichi
- Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565, Japan
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- Tani Masahiko
- Kansai Advanced Research Center, Communications Research Laboratory, Iwaoka, Kobe, Hyogo 651–24, Japan
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- Sakai Kiyomi
- Kansai Advanced Research Center, Communications Research Laboratory, Iwaoka, Kobe, Hyogo 651–24, Japan
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- Tokuda Yasunori
- Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan
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- Kanamoto Kyozo
- Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan
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- Abe Yuji
- Advanced Technology R&D Center, MITSUBISHI Electric Corporation, Itami, Hyogo 664, Japan
書誌事項
- タイトル別名
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- Characterization of Crystallinity in Lo
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説明
Low-temperature-grown GaAs homo-epitaxial layers were studied by Raman scattering and time-resolved photoreflectance techniques. Raman spectral profiles, polarization properties and lifetimes of photo-induced carriers depend strongly on growth conditions and post annealing. The experimental results showed that heavily defective layers were formed in as-grown layers, while post-annealed layers were less defective and consisted of partially misoriented crystallites or polycrystals. The carrier lifetime was short and the magnitude of the optical response was small in defective layers grown at relatively low temperatures, while the optical response was increased by annealing and by increasing the growth temperature. Of the samples tested, GaAs layers grown at 200-250° C and post-annealed layers gave a lifetime of 0.3 ps with relatively high optical response.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (12A), 5955-5963, 1996
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206250572672
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- NII論文ID
- 210000039966
- 110003905476
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4121619
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可