Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamnic Random Access Memories
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- Ueno Shuichi
- ULSI Development Center, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664-8641, Japan
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- Inoue Yasuo
- ULSI Development Center, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664-8641, Japan
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- Inuishi Masahide
- ULSI Development Center, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664-8641, Japan
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- Tsubouchi Natsuro
- ULSI Development Center, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664-8641, Japan
書誌事項
- タイトル別名
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- Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories.
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抄録
We have reported the test structure for measuring the leakage characteristics of the local junctions. In this paper, we analyze the measurement results of the leakage characteristics of local pn junctions. We determined that the trap-assisted tunneling mechanism controls the leakage current of the main mode cells. It is observed that the increment of the leakage current at the leaky junctions in the tail mode is smaller than that at the normal junctions in the main mode when the supply voltage is increased. We propose a two-traps related leakage mechanism for the leakage current of the pn junctions in the tail mode. The two-traps pair increases the leakage current and forms the tail mode in the distribution of retention time of the dynamic random access memories.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 39 (4B), 1963-1968, 2000
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206251166848
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- NII論文ID
- 110004078261
- 130004527350
- 210000046974
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 5384333
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可