Simulation of Optical Constants Range of High-Transmittance Attenuated Phase-Shifting Masks Used in KrF Laser and ArF Laser.
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- Kim Eunah
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea
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- Moon Seong-yong
- Samsung Electronics Co., Ltd., Yongin, Kyongki-do, Korea
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- Kim Yong-hoon
- Samsung Electronics Co., Ltd., Yongin, Kyongki-do, Korea
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- Yoon Hee-sun
- Samsung Electronics Co., Ltd., Yongin, Kyongki-do, Korea
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- No Kwangsoo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea
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抄録
Phase-shifting masks (PSMs) have provided us a breakthrough in the future semiconductor industry by extending lithography further to the submicrometer order. PSMs have been used over the past several years, and their requirements have changed due to the development of semiconductor technology. We investigated high-transmittance attenuated PSMs (HT-Att-PSMs) that satisfy the requirements of 20± 5% transmittance and 180º phase shift at the exposure wavelength and less than 40% transmittance at the inspection wavelength. Regarding the wavelength, we targeted the inspection wavelength of 248 nm for ArF laser (exposure wavelength of 193 nm) HT-Att-PSM, and 365 nm for KrF laser (exposure wavelength of 248 nm) HT-Att-PSM. In this study, we developed refractive index-extinction coefficient-thickness (n-k-d) charts showing optimum optical constant ranges for HT-Att-PSM using the matrix method. The simulation was verified by comparing calculated transmittance data with measured ones.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 39 (11), 6321-6328, 2000
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206251545728
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- NII論文ID
- 210000048004
- 110004055667
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 5576533
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 使用不可