Anomalous Surface Amorphization of Si(001) Induced by 3-5keV Ar〔+〕 Ion Bombardment
-
- Nakajima Kaoru
- Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
-
- Toyofuku Hisami
- Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
-
- Kimura Kenji
- Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501, Japan
書誌事項
- タイトル別名
-
- Anomalous Surface Amorphization of Si(001) Induced by 3-5keV Ar+ Ion Bombardment.
- Anomalous Surface Amorphization of Si(001) Induced by 3–5 keV Ar<sup>+</sup> Ion Bombardment
この論文をさがす
抄録
The process of amorphization of Si(001) by 3–5 keV Ar+ ion bombardment is investigated using high-resolution Rutherford backscattering spectroscopy (RBS)/channeling with a depth resolution of ∼0.6 nm. Particular emphasis is placed on the effect of knocked-in oxygen atoms from a native oxide layer which usually exists at the surface in the industrial processes. No essential difference is observed in the amorphization process between the Si(001) wafers with and without a native oxide layer, showing no important role of the knocked-in oxygen in the amorphization process. The amorphization is found to proceed from the surface instead of from the projected range of the implanted ions or the peak depth of the ion-induced defects. The observed results can be explained in terms of preferential defect clustering at surfaces.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 40 (4A), 2119-2122, 2001
The Japan Society of Applied Physics
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001206252601984
-
- NII論文ID
- 210000049227
- 10006617458
-
- NII書誌ID
- AA10457675
-
- ISSN
- 13474065
- 00214922
-
- NDL書誌ID
- 5760638
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可