Atomic Layer Deposition- and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta2O5 and Al2O3 Metal Insulator Silicon Capacitor for 0.13μm Technology and Beyond

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  • Lim Hyun Seok
    Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Lee, Ki heung-Eup, Yongin City, Kyungki-Do 449-900, Korea
  • Kang Sang Bom
    Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Lee, Ki heung-Eup, Yongin City, Kyungki-Do 449-900, Korea
  • Jeon In Sang
    Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Lee, Ki heung-Eup, Yongin City, Kyungki-Do 449-900, Korea
  • Choi Gil Heyun
    Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Lee, Ki heung-Eup, Yongin City, Kyungki-Do 449-900, Korea
  • Park Young Wook
    Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Lee, Ki heung-Eup, Yongin City, Kyungki-Do 449-900, Korea
  • Lee Sang In
    Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Lee, Ki heung-Eup, Yongin City, Kyungki-Do 449-900, Korea
  • Moon Joo Tae
    Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Lee, Ki heung-Eup, Yongin City, Kyungki-Do 449-900, Korea

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タイトル別名
  • Atomic Layer Deposition- and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta2O5 and Al2O3 Metal Insulator Silicon Capacitor for 0.13.MU.m Technology and Beyond.
  • Atomic Layer Deposition and Chemical Vapor Deposition TiN Top Electrode Optimization for the Reliability of Ta2O5 and Al2O3 Metal Insulator Silicon Capacitor for 0 13マイクロm Technology and Beyond
  • Atomic Layer Deposition- and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta<sub>2</sub>O<sub>5</sub> and Al<sub>2</sub>O<sub>3</sub> Metal Insulator Silicon Capacitor for 0.13 µm Technology and Beyond

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TiCl4-based atomic layer deposition (ALD)- and chemical vapor deposition (CVD)-TiN films are applied as the metal top electrode for Ta2O5 and Al2O3 metal insulator silicon (MIS) capacitor. The effects of factors such as Cl content, step coverage, deposition temperature of the TiN top electrode processes and pre-NH3 flushing on the electrical properties and reliability of the Ta2O5 and Al2O3 MIS capacitor are studied. Among these factors, poor step coverage shows distinctly degraded electrical properties of MIS capacitor, and high deposition temperature of TiN processes also degraded electrical properties, particularly those of Ta2O5. Although similar capacitance and leakage characteristics are measured with high chlorine content and pre-NH3 flushing TiN processes, a difference in the orders of magnitude is observed in time dependent dielectric breakdown (TDDB) measurements. Regarding the deposition temperature and pre-NH3 flushing effect, the electrical and TDDB characteristics of Ta2O5 degrade even more severely than those of Al2O3. Degradation of TDDB in TiN films with NH3 flushing prior to deposition is attributed to the reduction effect of the dielectric material by NH3 gas. Based on the X-ray photoelectron spectroscopy (XPS) analysis results, Al2O3 is chemically more inert than Ta2O5. In addition, the degradation of TDDB characteristics is directly correlated to the early generation of Vp-dependent solid “0” fail bit counts. Due to the relatively low deposition temperature as well as to the excellent step coverage and low resistivity, the ALD-TiN process is ideal for enhancing the reliability of a MIS capacitor.

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