Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors.
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- Okada Hiroshi
- Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan
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- Hasegawa Hideki
- Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan
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We report on the successful realization of a novel single electron memory device utilizing a Schottky in-plane gate (IPG) quantum wire transistor (QWTr) with nano Schottky metal dots whose position and size can be precisely controlled. Current-voltage (I-V) characteristics of the nano-metal dot formed on n-GaAs showed clear hysteresis which suggests charging of the nano-metal dot. A fabricated single electron memory device utilizing nano-metal dots showed clear threshold voltage shift once the bias was applied to the charging control gate of the nano-metal dot. This indicates successful memory operation of the fabricated device.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 40 (4B), 2797-2800, 2001
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206253419648
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- NII論文ID
- 210000049377
- 10006619517
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 5785100
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 使用不可