A Highly-Efficient Tungsten-Polycide Gate Radio-Frequency Power Metal-Oxide-Semiconductor Field-Effect-Transistor Using Bonded Silicon-on-Insulator Technology.

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  • Matsumoto Satoshi
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Hiraoka Yasushi
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Sakai Tatsuo
    NTT Telecommunications Energy Laboratories, 3-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0198, Japan

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  • Highly Efficient Tungsten Polycide Gate Radio Frequency Power Metal Oxide Semiconductor Field Effect Transistor Using Bonded Silicon on Insulator Technology

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Highly-efficient RF thin-film silicon-on-insulator (SOI) power metal-oxide-semiconductor field-effect-transistors (MOSFETs) were fabricated by a 0.4-μm complementary metal-oxide-semiconductor field-effect-transistors (CMOSFET)/SOI process. Their breakdown voltages were more than 10 V when the gate and drain offset lengths were 0.4 μm, and the cutoff frequency and maximum oscillation frequency were 20.4 and 20.7 GHz, respectively. When the drain supply voltage was 3.0 V, its power-added efficiency and saturation output power were 66% and 24 dBm at 2 GHz and were 20.3 dBm and 52% at 5.8 GHz. These values were higher than the corresponding values for a thin-film SOI power MOSFET fabricated using state-of-the-art 0.5-μm CMOS/SOI technology. These results indicate that the 0.4-μm-rule thin-film SOI technology is applicable at not only 2-GHz-band but also 5 GHz-band.

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