Fabrication of Polycrystalline Silicon Films from SiF<sub>4</sub>/H<sub>2</sub>/SiH<sub>4</sub> Gas Mixture Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition with In Situ Plasma Diagnostics and Their Structural Properties

DOI Web Site Web Site Web Site 参考文献18件
  • Nakahata Kouichi
    The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
  • Ro Kazuyoshi
    The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
  • Suemasu Atsushi
    The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
  • Kamiya Toshio
    The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
  • Fortmann Charles Michael
    The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
  • Shimizu Isamu
    The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

書誌事項

タイトル別名
  • Fabrication of Polycrystalline Silicon Films from SiF4/H2/SiH4 Gas Mixture Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition with In Situ Plasma Diagnostics and Their Structural Properties.

この論文をさがす

抄録

Polycrystalline silicon (poly-Si) films were fabricated by very high frequency (VHF) plasma enhanced (PE) chemical vapor deposition (CVD) from SiF4 and H2 gas mixture with small amounts of SiH4. Reactions and growth of poly-Si in the SiF4/H2/SiH4 system were discussed together with the results obtained from in situ plasma diagnostics, and compared with those obtained by microwave PECVD (MW CVD). As a result, similar relationships among growth temperature, SiF4/H2 gas flow ratio and film structure to those obtained with MW CVD were obtained with VHF CVD. For example, growth temperature could be reduced to 100°C while keeping a high crystal fraction (>80%) when small SiF4/H2 gas flow ratios were used. In contrast, under large SiF4/H2 gas flow ratios, crystal fraction rapidly decreased with decreasing temperature. The role of fluorine-related species in the growth of poly-Si was examined in relation to film microstructure and the results obtained from plasma diagnostics. Finally, guiding principles to achieve high rate and/or low-temperature growth of poly-Si by VHF CVD using SiF4/H2 gas mixtures were discussed.

収録刊行物

参考文献 (18)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ