TiN Films Prepared by Flow Modulation Chemical Vapor Deposition using TiCl<sub>4</sub> and NH<sub>3</sub>

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  • Hamamura Hirotaka
    Department of Chemical System Engineering, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Komiyama Hiroshi
    Department of Chemical System Engineering, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Shimogaki Yukihiro
    Department of Metallurgy and Material Sciences, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

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  • TiN Films Prepared by Flow Modulation Chemical Vapor Deposition using TiCl4 and NH3.

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We propose a new chemical vapor deposition (CVD) process, the flow modulation chemical vapor deposition (FMCVD) process, to obtain high quality titanium nitride (TiN) films at low deposition temperature in a single CVD chamber. FMCVD uses sequential deposition and reduction processes, such as the deposition of TiN films followed by chlorine reduction. This cycle was repeated to achieve sufficient film thickness. By decreasing the thickness in one cycle, the residual chlorine concentration and the resistivity of the films decreased. Using FMCVD process, we could achieve low resistivity (250 μΩcm), low residual chlorine concentration (2 at.%) with uniform step coverage at low deposition temperature (380ºC).

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