Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors.

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  • Inoue Satoshi
    Technology Platform Research Center, Seiko Epson Corporation, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 392-0293, Japan
  • Ohshima Hiroyuki
    Displays Operations Division, Seiko Epson Corporation, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 392-0293, Japan
  • Shimoda Tatsuya
    Technology Platform Research Center, Seiko Epson Corporation, Fujimi 281, Fujimi-machi, Suwa-gun, Nagano 392-0293, Japan

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The reliability of low-temperature-processed (≤425°C) polycrystalline-silicon thin film transistors (poly-Si TFTs) was investigated. For n-channel TFTs, the sub-threshold characteristics shifted in the positive direction when a high voltage stress was applied to them, which is particularly significant in small-size TFTs as well as in wide-channel TFTs. It was verified that the temperature of the TFTs reached over 300°C due to self-heating when this stress was applied. We estimate that the breaking of Si-H bonds and re-generation of dangling bonds in the channel poly-Si layers due to self-heating are responsible for the degradation phenomenon.

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