Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone
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- Tosaka Aki
- National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier
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- Nishiguchi Tetsuya
- National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier Meidensha Corporation
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- Nonaka Hidehiko
- National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier
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- Ichimura Shingo
- National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier
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抄録
An ultra low-temperature (<300°C) silicon oxidation process in which KrF excimer laser light (λ=248 nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO2 film was 5.2 nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO2 in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler–Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (33-36), L1144-L1146, 2005
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206263581312
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- NII論文ID
- 210000059301
- 130004766231
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- NII書誌ID
- AA11906093
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/00218979
- http://id.crossref.org/issn/00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 7425817
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可