CuAlS2 Thin-Films Prepared by Sulfurization of Metallic Precursors and their Properties
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- Bhandari Ramesh Kumar
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
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- Hashimoto Yoshio
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
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- Ito Kentaro
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
Bibliographic Information
- Other Title
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- CuAlS<sub>2</sub>Thin-Films Prepared by Sulfurization of Metallic Precursors and their Properties
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Description
CuAlS2 thin-films with the (112) preferred orientation have been prepared for the first time by sulfurization of metallic precursors in a vacuum-sealed quartz ampule at temperatures ranging from 530°C to 850°C. The film had resistivity as low as 62 Ω·cm, and exhibited p-type conduction. The structure of the film was characterized by X-ray diffraction, scanning electron microscopy and electron probe micro-analysis. The bandgap estimated by an optical transmission measurement was 3.50 eV, in fair agreement with that of the single crystal.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (10), 6890-6893, 2004
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390001206263781760
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- NII Article ID
- 210000056499
- 10013744932
- 130004531494
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- NII Book ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL BIB ID
- 7124062
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed