CuAlS<sub>2</sub>Thin-Films Prepared by Sulfurization of Metallic Precursors and their Properties

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  • Bhandari Ramesh Kumar
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
  • Hashimoto Yoshio
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
  • Ito Kentaro
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University

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  • CuAlS2 Thin-Films Prepared by Sulfurization of Metallic Precursors and their Properties

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CuAlS2 thin-films with the (112) preferred orientation have been prepared for the first time by sulfurization of metallic precursors in a vacuum-sealed quartz ampule at temperatures ranging from 530°C to 850°C. The film had resistivity as low as 62 Ω·cm, and exhibited p-type conduction. The structure of the film was characterized by X-ray diffraction, scanning electron microscopy and electron probe micro-analysis. The bandgap estimated by an optical transmission measurement was 3.50 eV, in fair agreement with that of the single crystal.

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