Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P〔+〕-Implanted at Room Temperature
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- Okada Tatsuya
- Department of Mechanical Engineering, Tokushima University
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- Negoro Yuki
- Department of Electronic Science and Engineering, Kyoto University
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- Kimoto Tsunenobu
- Department of Electronic Science and Engineering, Kyoto University
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- Okamoto Kouichi
- Department of Mechanical Engineering, Tokushima University
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- Kujime Noriyuki
- Department of Mechanical Engineering, Tokushima University
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- Tanaka Naoki
- Department of Mechanical Engineering, Tokushima University
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- Matsunami Hiroyuki
- Department of Electronic Science and Engineering, Kyoto University
書誌事項
- タイトル別名
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- Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P+-Implanted at Room Temperature
- Defect Formation in (0001)- and (11\bar20)-Oriented 4H-SiC Crystals P<sup>+</sup>-Implanted at Room Temperature
この論文をさがす
説明
Transmission electron microscopy was applied to investigating defect formation in (0001)- and (11\\bar20)-oriented 4H-SiC crystals in which a high dose of phosphorous ions had been implanted at room temperature. Defect formation after postimplantation annealing was totally different for the two crystal orientations. The implanted layer of the (0001)-oriented crystal recrystallized to form a highly defective polycrystal containing 3C-SiC grains. On the other hand, the (11\\bar20)-oriented crystal was virtually defect-free except for a very thin residual amorphous film in the topmost region.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (10), 6884-6889, 2004
The Japan Society of Applied Physics
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390001206263783168
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- NII論文ID
- 10013744919
- 210000056498
- 130004531447
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 7124052
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
