Growth of Carbon Nanowalls on a SiO<sub>2</sub> Substrate by Microwave Plasma-Enhanced Chemical Vapor Deposition

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  • Growth of Carbon Nanowalls on a SiO2 Substrate by Microwave Plasma-Enhanced Chemical Vapor Deposition

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We investigated the growth process of carbon nanowalls (CNWs) on a SiO2 substrate by microwave plasma-enhanced chemical vapor deposition (MPECVD). It is revealed that the CNWs are grown at the fine-textured structure on the SiO2 and the growth process does not require the catalyst. The CNW initially has a semicircular shape. The height, thickness, and mesh size increase with growth time. It is found that the height of CNWs as a function of time obeys the square root law. Extremely high growth rate, approximately 10 μm/h, is achieved, in contrast to previous studies.

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