Improvement of Oxidation-Induced Ge Condensation Method by H〔+〕 Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

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  • Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
  • Improvement of Oxidation-Induced Ge Condensation Method by H<sup>+</sup> Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

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The effects of the H+ implantation (8.1 keV and 0–5×1016 cm−2) and two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) on the stress relaxation of c-Si1−xGex buffer layers on insulator (SGOI) formed by the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI during oxidation (1100°C) was significantly improved by high-dose (>1015 cm−2) H+ implantation. However, the oxidation was also enhanced by the implantation. The enhanced oxidation was completely suppressed by the two-step annealing before oxidation. The enhanced stress relaxation was attributed to the enhanced gliding of the c-Si1−xGex layers on SiO2. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge condensation will be a powerful tool in the fabrication of highly relaxed SGOI for growth of strained Si layers.

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