Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation

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  • Takagi Hideki
    Mechanical Engineering Laboratory, Agency of Industrial Science and Technology, Ministry of International Trade and Industry, 1–2 Namiki, Tsukuba, Ibaraki 305–8564, Japan
  • Maeda Ryutaro
    Mechanical Engineering Laboratory, Agency of Industrial Science and Technology, Ministry of International Trade and Industry, 1–2 Namiki, Tsukuba, Ibaraki 305–8564, Japan
  • Chung Teak Ryong
    Research Center for Advanced Science and Technology, University of Tokyo, 4–6–1 Komaba, Meguro, Tokyo 153–8904, Japan
  • Hosoda Naoe
    Research Center for Advanced Science and Technology, University of Tokyo, 4–6–1 Komaba, Meguro, Tokyo 153–8904, Japan
  • Suga Tadatomo
    Research Center for Advanced Science and Technology, University of Tokyo, 4–6–1 Komaba, Meguro, Tokyo 153–8904, Japan

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タイトル別名
  • Effect of Surface Roughness on Room-Tem

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Using Ar beam etching in vacuum, strong bonding of Si wafers is attained at room temperature. With appropriate etching time, the bonding occurs spontaneously without any load to force two wafers together. However, surface roughness of the wafers increases during Ar beam etching. Because surface roughness has a strong influence on wafer bonding, long etching time degrades the bonding strength. Using atomic force microscope, we measured surface roughness enhancement caused by Ar beam etching, and investigated the relationship between surface roughness and bonding properties such as strength and interfacial voids. The results agree well with theoretical predictions using elastic theory and energy gain by bond formation. A guideline for successful room-temperature bonding is proposed from these results.

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