Oxygen Deficiency and Electrical Conductivity in LnNiO3-z (Ln=La, Pr) and LaCuO3-z.

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  • LnNiO3-z(Ln=La,Pr)及びLaCuO3-zの酸素欠損と電気伝導
  • Ln Ni O3-z Ln La Pr オヨビ La Cu O3-z ノ サン

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We report the preparation, structure and electrical properties of LaNiO3-z, PrNiO23-z and LaCuO3-x. Wide range of oxygen deficiency was realized by changing the synthetic oxygen pressure. These systems show metallic conductivity even for the samples having a large amount of oxygen vacancy (Z<0.25). The Seebeck coefficient measurement showed that the dominant carrier in LnNiO3-z system is electron, while hole carrier is dominant in LaCuO3-z system.

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