Electronic Density of State of Mn-N Thin Films Measured by XPS
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- MORIO Kazumasa
- Graduate School of Engineering, Tokai University
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- KOIZUMI Yoshiharu
- Graduate School of Engineering, Tokai University
Bibliographic Information
- Other Title
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- Mn-N化合物薄膜の電子状態密度のXPS測定
- Mn N カゴウブツ ハクマク ノ デンシ ジョウタイ ミツド ノ XPS ソクテイ
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Abstract
Polycrystalline thin films with an oriented direction of ε-Mn4N along the (111) axis and of η-Mn3N2 along the (113) axis were prepared as a single phase by RF reactive magnetron sputtering method. A comparison of XPS spectral analysis with discrete Variational-Xα method showed that the N atoms in Mn-N compounds behave as a donor and govern the magnetic properties of the films. The ε-Mn4N films was a single phase perovskait type crystal with lattice parameter 0.386 nm, and this films had properties of the ferrimagnetism with 1.1 μB per unit cell. The η-Mn3N2 films was face center tetragonal (a = 0.4205 nm, c = 1.2131 nm), and it had properties of antiferromagnetism with 0.4 μB per unit cell.
Journal
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- Hyomen Kagaku
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Hyomen Kagaku 24 (8), 480-484, 2003
The Surface Science Society of Japan
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Details 詳細情報について
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- CRID
- 1390001206456685824
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- NII Article ID
- 10011734978
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- NII Book ID
- AN00334149
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- COI
- 1:CAS:528:DC%2BD3sXotlegsLo%3D
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- ISSN
- 18814743
- 03885321
- http://id.crossref.org/issn/03885321
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- NDL BIB ID
- 6673608
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed