Water-Adsorbed Ultrathin GeO<sub>2</sub>/Ge and SiO<sub>2</sub>/Si Structure Studied In Situ by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy

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Other Title
  • 準大気圧下でのX線光電子分光測定による水分子が吸着した極薄GeO<sub>2</sub>/GeおよびSiO<sub>2</sub>/Si構造の観察
  • 準大気圧下でのX線光電子分光測定による水分子が吸着した極薄GeO₂/GeおよびSiO₂/Si構造の観察
  • ジュンタイキ アッカ デ ノ Xセン コウデンシ ブンコウ ソクテイ ニ ヨル ミズブンシ ガ キュウチャク シタ ゴクウス GeO ₂/Ge オヨビ SiO ₂/Si コウゾウ ノ カンサツ

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<p>We carried out near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS) measurements of water-adsorbed ultrathin GeO2 films on Ge substrates, and the results were compared with those for SiO2 films on Si. We obtained NAP-XPS spectra at relative humidity (RH) values of up to ∼15% and showed that the GeO2/Ge structures attract more water molecules than the SiO2/Si structures at RH above ∼10−4%. This is probably because water molecules infiltrate the GeO2 films to form hydroxyls. Then we revealed positive charging of the water-adsorbed SiO2 films by their interaction with X-rays. For the water-adsorbed GeO2 films, we observed greater positive charging of the films, of which origin is discussed.</p>

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 38 (7), 330-335, 2017

    The Surface Science Society of Japan

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