書誌事項
- タイトル別名
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- Interface Characterization and Control of GaN-based Heterostructures
- チッカブツ ハンドウタイ イシュ セツゴウ ノ カイメン ヒョウカ ト セイギョ
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Interface properties of GaN-based heterostructures have been characterized. Schottky contacts on dry-etched n-GaN layers showed leaky I-V characteristics. An anneal process at 400°C was effective in recovering the rectifying characteristics. To characterize interface properties of Al2O3 insulated gates on AlGaN/GaN structures with and without the inductively coupled plasma (ICP) etching of AlGaN, we have developed a C-V calculation method taking into account electronic state charges at the Al2O3/AlGaN interface and a photoassisted C-V technique utilizing photons with energies less than the bandgap of AlGaN. It was found that the ICP etching caused the monolayer-level interface roughness, disorder of the chemical bonds and formation of various types of defect complexes at the AlGaN surface, resulting in poor C-V characteristics due to high-density interface states at the Al2O3/AlGaN interface.
収録刊行物
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- 表面科学
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表面科学 35 (2), 96-101, 2014
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390001206457921536
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- NII論文ID
- 130004785042
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- NII書誌ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 025244236
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
