<sup>Interface Control of GeO<sub>2</sub>/Ge for High-performance Ge CMOS</sup>

DOI Web Site 20 References

Bibliographic Information

Other Title
  • CMOSゲートスタック応用へ向けたGeO<sub>2</sub>/Ge 界面反応制御
  • CMOSゲートスタック応用へ向けたGeO₂/Ge界面反応制御
  • CMOS ゲートスタック オウヨウ エ ムケタ GeO ₂/Ge カイメン ハンノウ セイギョ
  • Interface Control of GeO2/Ge for High-performance Ge CMOS

Search this article

Description

This paper discusses the GeO2/Ge gate stack formation on the basis of the interface reaction control of Ge. The Ge oxidation is quite different from the Si one in terms of the fact that GeO desorption should be taken into account in the oxidation process. By using high-pressure oxidation, GeO desorption is thermodynamically suppressed, resulting that nearly perfect C-V characteristics in MOS capacitors and the record high electron mobility in n-channel MOSFETs have been demonstrated.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 33 (11), 622-627, 2012

    The Surface Science Society of Japan

References(20)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top