書誌事項
- タイトル別名
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- Fabrication of a SiC/Ge-Nanodots Stacked Structure Using Organometallic Compounds
- ユウキ キンゾク カゴウブツ オ モチイタ SiC/Ge ナノドット セキソウ コウゾウ ノ サクセイ
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説明
Ge(GeCx) and SiC(SiCGex) nanodots were formed on Si(001)2o off substrates after the formation of Si c(4×4) structure using monomethylgermane (MMGe). Surface structure of the Ge(GeCx) and SiC(SiCGex) nanodots was measured by scanning tunneling microscopy (STM). From the quantitative analysis of X-ray photoelectron spectroscopy (XPS), it was estimated that the Ge(GeCx) and SiC(SiCGex) nanodots existed in the ratio of about 1 : 2.4. SiC capping layer was formed on the Ge(GeCx), SiC(SiCGex) nanodots generated at 550∼650oC using monomethylsilane (MMSi). Photoluminescence (PL) spectra from the SiC/Ge (GeCx), SiC(SiCGex) dots/SiCx stacked structure were also measured.
収録刊行物
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- 表面科学
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表面科学 33 (7), 376-381, 2012
公益社団法人 日本表面科学会
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詳細情報 詳細情報について
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- CRID
- 1390001206459266304
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- NII論文ID
- 10030824383
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- NII書誌ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 023885147
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
