New Patterning Technology by Integrating Atomic Layer Deposition Process to the Etching Flow

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Other Title
  • 原子層堆積装置およびエッチング装置を組み合わせた極微細パターンニング形成
  • ゲンシソウ タイセキ ソウチ オヨビ エッチング ソウチ オ クミアワセタ ゴク ビサイ パターンニング ケイセイ

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Description

<p>We introduce a state-of-the-art patterning process developed by new patterning technology using Atomic Layer Deposition (ALD) towards 5/7 nm generation. In the patterning process, critical dimension (CD) shrink technique without CD loading is one of the key requirements. However, in the conventional CD shrink technique, CD loading canʼt be solved in principle. To overcome this issue, by integrating ALD process into the etching flow, we developed a new CD shrink technique without causing CD loading. Furthermore, CD shrink amount can be precisely controlled by the number of ALD cycles while keeping the excellent CD shrink uniformity across a wafer. This is obtained by utilizing a conformal layer with characteristics of ALDʼs self-limiting reaction, which is independent of the pattern variety.</p>

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 38 (5), 210-215, 2017

    The Surface Science Society of Japan

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