反応性スパッタ法によるSm‐Fe超磁歪薄膜の作製

書誌事項

タイトル別名
  • Sm-Fe Thin Film Prepared by Reactive Sputtering Process

抄録

  Sm-Fe thin films as giant magnetostrictive materials were prepared by d.c. magnetron sputtering process with Ar or mixed N2-Ar sputtering gas. In X-ray diffraction patterns of the film prepared by 2.3 vol% N2-Ar as sputtering gas, diffraction peaks of SmN and Fe2N where observed. With increasing N2 gas amount, saturated magnetostriction of the Sm-Fe thin films decreased from 1400 ppm to 600 ppm. The maximum value of magnetostrictive susceptibility was showed at the film prepared by 1.0 vol% of N2-Ar gas. The film prepared by pure Ar gas showed compressive stress with 0.5 GPa. Sm-Fe thin films prepared by mixed N2-Ar gas showed about 0.7 GPa of compressive stress. Increasing of magnetostrictive susceptibility of films prepared by N2-Ar gas due to reduce of perpendicular magnetic anisotropy energy.<br>

収録刊行物

  • 日本金属学会誌

    日本金属学会誌 70 (8), 615-617, 2006

    公益社団法人 日本金属学会

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