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- 三文字 昌久
- 東海電極製造株式会社茅ヶ崎工場
書誌事項
- タイトル別名
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- Resistivity Distribution at Cross Section in a Pulled Silicon Crystal
- ヒキアゲ シリコンタンケッショウ ノ ハンケイ ホウコウヒ テイコウ ブンプ
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抄録
To the analysis of resistivity distribution at cross section in a pulled Si crystal, the theory of effective distribution coefficient was applied.<BR>The following are illustrations of present report.<BR>(1) Solute concentration at cross section. (Experimental illustration.)<BR> (2) Analysis of concentration distribution at cross section. (On the effective distribution coefficient.)<BR>(3) Resistivity distribution at cross section of phosphorus doped Si crystals. (Experimental.)<BR>(4) Diffusion layer in the melt-solid interface. (On the calculated value with phosphorus doped Si-crystals.)<BR>(5) Resistivity distribution at cross section of boron doped Si-crystals. (Experimental.)<BR>(6) Resistivity distribution at cross section of a boron and phosphorus doped Si-crystal. (With the combination of 3 and 5.)<BR>(7) Discussion. (On the diffusion coefficients of impurities in molten Si.)<BR>The results are in agreement with another impurity doped Si-crystal in an assumption of diffusion coefficient.
収録刊行物
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- 日本金属学会誌
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日本金属学会誌 27 (5), 202-205, 1963
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390001206481847808
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- NII論文ID
- 40018258250
- 130007333487
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- NII書誌ID
- AN00187860
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- ISSN
- 18806880
- 24337501
- 00214876
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- NDL書誌ID
- 9153690
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可