Layered Structure of Sputter Deposited Indium Zinc Oxide Films

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  • Echigoya Jun-ichi
    Department of Materials Science and Engineering, Faculty of Engineering, Iwate University
  • Segawa Akio
    Graduate School of Engineering, Iwate University
  • Yamazaki Shiho
    Department of Materials Science and Engineering, Faculty of Engineering, Iwate University
  • Hayasaka Yuichiro
    Institute for Materials Research, Tohoku University

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  • スパッタ法により作製した酸化インジウム酸化亜鉛膜の周期的層状構造
  • スパッタホウ ニ ヨリ サクセイ シタ サンカ インジウム サンカ アエンマク ノ シュウキテキ ソウジョウ コウゾウ

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  Layered structure of indium zinc oxide (IZO) films sputter deposited on a (001) sapphire substrate at temperatures of 673 and 873 K was investigated by electron microscopy. IZO films were grown epitaxially in [001] direction on a sapphire substrate. Lattice distances of a deposited IZO film were close to those of an In2ZnkOk+3 compound estimated from In-Zn ratio of the film. Periodical layered structure was observed in the films of k=1, 2, and 3, when the substrate temperature was 873 K. Crystal structure and lattice parameters of the compound of k=1, In2ZnO4 was determined as a=0.3392 nm, c=2.627 nm with the rhombohedral structure.<br>

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