書誌事項
- タイトル別名
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- Dynamic Process Control of rf Reactive Sputtering by Monitoring Plasma Emission Intensity
- プラズマ ハッコウ キョウド シンゴウ ニヨル コウシュウハ ハンノウセイ ス
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説明
The process of rf reactive magnetron sputtering is suitable for depositing TiN films, because of its applicability for large-area processing. This process, however, shows the so-called hysteresis when the reactive gas is controlled by constant flow rate, which leads to a relatively poor reproducibility.<BR>In this paper, it is shown that the closed-loop nitrogen flow control by plasma emission monitoring (PEM) provides a stable reactive sputtering under a wide range of nitrogen partial pressure. The influence of the nitrogen partial pressure on the Ti-N film composition, crystallographic structure and resistivity was also investigated. The Ti-N films deposited at the nitrogen partial pressure of 2∼5×10−3 Pa revealed the minimum resistivity and appeared to be stoichiometric TiN. The PEM control system makes it possible to stably control this range of nitrogen partial pressure. This system also provides high rate film processing.
収録刊行物
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- 日本金属学会誌
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日本金属学会誌 61 (10), 1108-1114, 1997
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390001206492247296
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- NII論文ID
- 10001968272
- 10011634486
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- NII書誌ID
- AN00187860
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- ISSN
- 18806880
- 24337501
- 00214876
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- NDL書誌ID
- 4324334
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- JaLC
- NDLサーチ
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