書誌事項
- タイトル別名
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- 450kV X-ray Computed Tomography System Using Silicon Semiconductor Detectors
- シリコン ハンドウタイ ケンシュツキ オ モチイタ 450kV Xセン CT ソウチ
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抄録
A 450kV x-ray computed tomography system using silicon semiconductor detectors has been developed for non-destructive inspection and digital engineering use. Silicon semiconductor detectors output large current due to incident photons, and give good S/N against noise of circuits. But large volume silicon detectors have a large leakage current, and any change in it worsens the performance of CT image. Slight adjustment the circuits of the amplifier bias voltage reduce and control the leakage current of semiconductor detectors, so that the circuits realize long-term stability of the image quality. In addition, metal spacers are inserted between the detectors to reduce crosstalk noise caused by scattered x-rays. The noise is reduced to less than 1% of the output signal. This system realizes a short scanning time of 6sec/slice in the rotate-only mode. As an example of engineering, the scanning time of a motor cycle cylinder head is 120minutes for 800slices. Therefore, the system can acheive digital and reverse engineering, and non-destructive inspection.
収録刊行物
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- 非破壊検査
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非破壊検査 56 (2), 94-99, 2007
一般社団法人 日本非破壊検査協会
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詳細情報 詳細情報について
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- CRID
- 1390001206492893440
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- NII論文ID
- 10018542875
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- NII書誌ID
- AN00208370
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- NDL書誌ID
- 8675874
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- ISSN
- 03675866
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
