Application of Plasma Processes to Amorphous Semiconductors

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  • Nitta Shoji
    Department of Electrical Engineering, Gifu University

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Other Title
  • 6. プラズマ・プロセスのアモルファス半導体への応用
  • ヒロガル プラズマ ノ アタラシイ オウヨウ プラズマ プロセス 4 プラズマ

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Abstract

Present states of the understanding of the defects creation in the plasma processes to prepare hydrogenated amorphous silicon films a-Si : H are briefly reviewed. Then photo-induced defects creation that is called the Staebler-Wronski effect are also reviewed. Finally dimensionality in amorphous semiconductors are discussed with the example of Si-C system, especially stressed in hydrogenated one dimensional Si-C alloys which are situated between polysilane (SiH2)n and polyacetylene (CH)n.

Journal

  • Kakuyūgō kenkyū

    Kakuyūgō kenkyū 57 (4), 215-222, 1987

    The Japan Society of Plasma Science and Nuclear Fusion Research

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