SiGe-mixing-triggered rapid-melting growth for Ge-on-insulator formation―A road to artificial crystal―

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  • SiGeミキシング誘起溶融成長によるGOI（Ge on Insulator）の形成―人工単結晶への道―
  • SiGe ミキシング ユウキ ヨウユウ セイチョウ ニ ヨル GOI(Ge on Insulator)ノ ケイセイ : ジンコウタンケッショウ エ ノ ミチ

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Abstract

<p>The development of high-quality Ge-on-insulator (GOI) structures is essential for making a breakthrough into the scaling limit of Si large-scale integrated circuits. In the present paper, we review a new GOI growth technique, i.e., the SiGe-mixing-triggered rapid-melting growth technique, which enables chip-sized and mesh-shaped GOI structures. In addition, the integration of GOI(111) on Si(100) substrates becomes possible by combining this method with the Si-microseeding technique. These progresses pave the way for the artificial single-crystal technology.</p>

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  • Oyo Buturi

    Oyo Buturi 81 (5), 410-414, 2012-05-10

    The Japan Society of Applied Physics

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