書誌事項
- タイトル別名
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- Development of a Strain Sensor for Measuring the Residual Strain Distribution and Its Application to Highly Reliable Semiconductor Devices
抄録
<p>In this study, micro-scale strain sensors embedded in a silicon chip were developed in order to measure the local stress distribution in 3D semiconductor modules. This sensor utilized piezoresistive effect of single crystal silicon. The stress sensitivity at room temperature was 1.3 MPa/ and the stable operation of this sensor was confirmed in the temperature range from room temperature to 80oC at most. The stress distribution in a fine bump structure was measured using this sensor chip. The local distribution of the residual stress in a test 3D structure with various pitches of fine bumps was investigated. It was confirmed that the magnitude of the local deformation of the stacked chips varied a lot depending on the pitch of bumps. The magnitude of the residual stress increased monotonically with the pitch of bumps. Since the electronic performance of semiconductor devices is varied by mechanical stress, it is significantly important to control the stress distribution in complex 3D semiconductor modules for assuring high reliability.</p>
収録刊行物
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- 年次大会
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年次大会 2019 (0), J01106P-, 2019
一般社団法人 日本機械学会
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詳細情報 詳細情報について
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- CRID
- 1390002184886379264
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- NII論文ID
- 130007815986
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- ISSN
- 24242667
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可