Experimental Evaluation of Parasitic Bipolar Effects and Mechanical Stress Effects in SOI-Power-MOSFETs

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Other Title
  • SOI－パワーMOSFETにおける寄生バイポーラ効果と機械的応力効果の実験的評価
  • SOI-パワー MOSFET ニ オケル キセイ バイポーラ コウカ ト キカイテキ オウリョク コウカ ノ ジッケンテキ ヒョウカ
Published
2022-01-01
Resource Type
journal article
DOI
  • 10.5104/jiep.jiep-d-21-00007
Publisher
The Japan Institute of Electronics Packaging

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Description

<p>This paper reports on an experimental evaluation of mechanical stress effects in SOI (Silicon on Insulator) power devices. In particular, this study focuses on the interaction of parasitic bipolar effects which are unique physical phenomenon of SOI-type devices. The electrical characteristics of SOI-power-nMOSFETs (power n-type Metal-Oxide-Semiconductor Field-effect-transistors) under mechanical loading are measured using a four-point bending method. It is demonstrated that the parasitic bipolar effects may accelerate the electrical variation induced by the mechanical stress effects. In addition, the experimental results show the following:</p><p>• There may be a load direction dependence in the drain conductance change under the parasitic bipolar region.</p><p>• Gate-length dependence is not clarified.</p>

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