Improvement of Toroidal Plasma (TP) Type Sputtering for Depositing Co-Cr Films on Plasma-Free Substrates

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タイトル別名
  • プラズマ フリーCo Cr マク ケイセイヨウ トロイダル プラズマシキ スパ
  • プラズマフリーCo-Cr膜形成用トロイダルプラズマ式スパッタ法の改善

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説明

Co-Cr films for perpendicular recording have been deposited by the toroidal plasma (TP) type sputtering method with applying a magnetic field by a solenoid coil, or by attaching a magnet to the outer pole to change the plasma state during sputtering. By applying the magnetic field by the solenoid coil, discharge current, film thickness and film composition, saturation magnetization Ms of 480--800 emu/cc and coercivity Hc of 250--350 Oe in the films depended on the plasma state. On the other hand, by attaching the magnet to the outer pole, the magnetic flux distribution in front of the target plane was significantly improved. Therefore, the applied voltage to electrodes was lower from 520 to 440 V at Ar gas pressure of 0.2 Pa. The erosion profile of targets was changed. The variation in the film thickness and the Co content over the whole film plane were reduced.

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