Downflow Etching of Si Using a Microwave-Excited Discharge Plasma of Ar/CF_4 Mixtures
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Downflow etching of Si was studied using a microwave-excited discharge plasma of Ar/CF_4 mixtures under conditions that would produce less plasma-damage than that in our previous experiments [M. Tsuji et al., Jpn. J. Appl Phys., 38, 6470 (1999)]. A long distance between the center of discharge and the substrate (20cm) was used in order to reduce plasma-damage of the Si surface. The maximum etching rate was about 700Å/min at a microwave power of 80W, an Ar flow rate of 2500 sccm, and a CF_4 flow rate of 300 sccm. A thin C_mF_n polymer was deposited along the edges of etched region at high CF_4 flow rates above about 100 sccm. It was characterized using a XPS.
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- 九州大学機能物質科学研究所報告
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九州大学機能物質科学研究所報告 15 (1), 11-17, 2001
九州大学機能物質科学研究所
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詳細情報 詳細情報について
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- CRID
- 1390009224835547520
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- NII論文ID
- 110006177579
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- NII書誌ID
- AN10060378
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- ISSN
- 09143793
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- DOI
- 10.15017/7930
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- HANDLE
- 2324/7930
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- NDL書誌ID
- 5888753
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- IRDB
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用可