Downflow Etching of Si Using a Microwave-Excited Discharge Plasma of Ar/CF_4 Mixtures

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  • 辻 正治
    九州大学機能物質科学研究所
  • 岡野 慎司
    九州大学大学院総合理工学府量子プロセス理工学専攻
  • 田中 敦
    九州大学大学院総合理工学府量子プロセス理工学専攻
  • 田之上 剛
    九州大学大学院総合理工学府量子プロセス理工学専攻
  • 辻 剛志
    九州大学機能物質科学研究所

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Downflow etching of Si was studied using a microwave-excited discharge plasma of Ar/CF_4 mixtures under conditions that would produce less plasma-damage than that in our previous experiments [M. Tsuji et al., Jpn. J. Appl Phys., 38, 6470 (1999)]. A long distance between the center of discharge and the substrate (20cm) was used in order to reduce plasma-damage of the Si surface. The maximum etching rate was about 700Å/min at a microwave power of 80W, an Ar flow rate of 2500 sccm, and a CF_4 flow rate of 300 sccm. A thin C_mF_n polymer was deposited along the edges of etched region at high CF_4 flow rates above about 100 sccm. It was characterized using a XPS.

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